Anastasios Arvanitopoulos
Researcher
Anastasios E. Arvanitopoulos has received the BSc and MSc Diplomas in Electrical and Computer Engineering from the University of Patras, Greece in 2011. He received the PhD degree from Coventry University, UK in 2020. Currently, he is Senior Staff Specialist Product Development Wide BandGap Power Devices at Infineon Technologies, Austria. His research interests are focused on Wide Bandgap (WBG) power semiconductor devices for high performance electronics in Electric Vehicles (EVs).
Lophitis, N.; Arvanitopoulos, A.; Perkins, S.; Antoniou, M.: "TCAD device modelling and simulation of wide bandgap power semiconductors"; Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications, Kumar Sharma, Y (Editor), , pp., InTech – Open Access Publisher (10.5772/intechopen.76062), , , 2018.
Arvanitopoulos, A.; Antoniou, M.; Li, F.; Jennings, M.; Perkins, S.; Gyftakis, K. N.; Lophitis, N.: "3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations"; IEEE Transactions on Industry Applications, Vol. 58, No. 1, pp. 565-575, January / February, 2022.
Arvanitopoulos, A.; Li, F.; Jennings, M.; Perkins, S.; Gyftakis, K. N.; Mawby, P.; Antoniou, M.; Lophitis, N.: "Experimental and Physics-Based Study of the Schoottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-SI Schottky Barrier Diodes"; IEEE Transactions on Industry Applications, Vol. 57, No. 5, pp. 5252-5263, September / October, 2021.
Arvanitopoulos, A.; Antoniou, M.; Jennings, M.; Perkins, S.; Gyftakis, K. N.; Mawby, P.; Lophitis, N.: "A Defects’-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes"; IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 8, No. 1, pp. 54-65, March, 2020.
Arvanitopoulos, A.; Antoniou, M.; Jennings, M.; Perkins, S.; Gyftakis, K. N.; Mawby, P.; Lophitis, N.: "A Defects’-based model on the Barrier Height behaviour in 3C-SiC-on-Si Schottky Barrier Diodes"; IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. In Press, No. In Press, pp. In Press, October / November, 2019.
Arvanitopoulos, A.; Antoniou, M.; Perkins, S.; Jennings, M.; Belanche Guadas, M.; Gyftakis, K. N.; Lophitis, N.: "On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes"; IEEE Transactions on Industry Applications, Vol. 55, No. 4, pp. 4080-4090, July / August, 2019.
Arvanitopoulos, A.; Lophitis, N.; Gyftakis, K. N.; Perkins, S.; Antoniou, M.: "Validated Physical Models and Parameters of Bulk 3C–SiC Aiming for Credible Technology Computer Aided Design (TCAD) Simulation"; Semiconductor Science and Technology, Vol. 32, No. 10, pp. 1-13, October, 2017.
Lophitis, N.; Perkins, S.; Arvanitopoulos, A.; Faramehr, S.; Igic, P.: "An Experimentally Driven Assessment of the Dynamic-on Resistance in Correlation to Other Performance Indicators in Commercial Gallium Nitride Power Devices"; IEEE Workshop on Wide Bandgap Power Devices and Applications, Coventry, United Kingdom, pp. 1-6, September, 2022.
Lophitis, N.; Arvanitopoulos, A.; Jennings, M.; Mawby, P.; Antoniou, M.: "On the 3C-SiC/SiO2 n-MOS Interface and the Creation of a Calibrated Model for the Electrons' Inversion Layer Mobility Covering a Wide Range of Operating Temperatures and Applied Gate Voltage"; IEEE Workshop on Wide Bandgap Power Devices and Applications, Coventry, United Kingdom, pp. 1-5, September, 2022.
Arvanitopoulos, A.; Li, F.; Jennings, M.; Perkins, S.; Gyftakis, K. N.; Antoniou, M.; Mawby, P.; Lophitis, N.: "Experimental Investigation and Verification of Traps Affecting the Performance of 3C-SiC-on-Si Schottky Barrier Diodes"; IEEE Energy Conversion Congress and Exposition, Baltimore, USA, pp. 1941-1947, September / October, 2019.
Arvanitopoulos, A.; Antoniou, M.; Li, F.; Jennings, M.; Perkins, S.; Gyftakis, K. N.; Lophitis, N.: "Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations"; IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics & Drives, Toulouse, France, pp. 364-370, August, 2019.
Perkins, S.; Antoniou, M.; Tiwari, A. K.; Arvanitopoulos, A.; Gyftakis, K. N.; Trajkovic, T.; Udrea, F.; Lophitis, N.: "Optimal Edge Termination for High Oxide Reliability Aiming 10kV SiC n-IGBTs"; IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics & Drives, Toulouse, France, pp. 358-363, August, 2019.
Arvanitopoulos, A.; Antoniou, M.; Jennings, M.; Li, F.; Perkins, S.; Gyftakis, K. N.; Lophitis, N.: "On the Development of the 3C-SiC Power Law and its Applicability for the Evaluation of Termination Structures"; International Symposium on Power Semiconductors, Prague, Czech Republic, pp. , August, 2018.
Arvanitopoulos, A.; Perkins, S.; Gyftakis, K. N.; Jennings, M.; Antoniou, M.; Lophitis, N.: "Carrier Transport Mechanisms Contributing to the Sub-Threshold Current in 3C-SiC-on-Si Schottky Barrier Diodes"; IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi’an, China, pp. 169-173, May, 2018.
Perkins, S.; Arvanitopoulos, A.; Gyftakis, K. N.; Lophitis, N.: "On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures"; IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi’an, China, pp. 174-178, May, 2018.
Perkins, S.; Arvanitopoulos, A.; Gyftakis, K. N.; Lophitis, N.: "A Comprehensive Comparison of the Static Performance of Commercial GaN-on-Si Devices"; IEEE Workshop on Wide Bandgap Power Devices and Applications, Albuquerque, New Mexico, pp. 177-184, December, 2017.
Arvanitopoulos, A.; Lophitis, N.; Gyftakis, K. N.; Belanche Guadas, M.; Perkins, S.; Antoniou, M.: "Physical Parameterisation of 3C-Silicon Carbide (SiC) with Scope to Evaluate the Suitability of the Material for Power Diodes as an Alternative to 4H-SiC"; IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics & Drives, Tinos, Greece, pp. 565-571, August / September, 2017.
Arvanitopoulos, A.; Perkins, S.; Gyftakis, K. N.; Antoniou, M.; Lophitis, N.: "3C-SiC Material Parameters for Accurate TCAD Modelling and Simulation"; International Conference on Silicon Epitaxy and Heterostructures, Coventry, UK, pp. 115-116, May, 2017.
Arvanitopoulos, A., "Monolithic Power Integrated Circuits for Compact High Performance Electronics in Electric Vehicles", Co-Supervisor: Gyftakis, K. N., Coventry University, UK, 2020.
