Member

Arvanitopoulos, A.; Antoniou, M.; Jennings, M.; Li, F.; Perkins, S.; Gyftakis, K. N.; Lophitis, N.: ''On the Development of the 3C-SiC Power Law and its Applicability for the Evaluation of Termination Structures''; International Symposium on Power Semiconductors, Prague, Czech Republic, pp. , August, 2018.
Perkins, S.; Arvanitopoulos, A.; Gyftakis, K. N.; Lophitis, N.: ''On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures''; IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi’an, China, pp. 174-178, May, 2018.
Arvanitopoulos, A.; Perkins, S.; Gyftakis, K. N.; Jennings, M.; Antoniou, M.; Lophitis, N.: ''Carrier Transport Mechanisms Contributing to the Sub-Threshold Current in 3C-SiC-on-Si Schottky Barrier Diodes''; IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi’an, China, pp. 169-173, May, 2018.
Lophitis, N.; Perkins, S.; Gyftakis, K. N.; Belanche Guadas, M.; Antoniou, M.: ''Physical Parameterisation of 3C-Silicon Carbide (SiC) with Scope to Evaluate the Suitability of the Material for Power Diodes as an Alternative to 4H-SiC''; IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics & Drives, Tinos, Greece, pp. 565-571, August / September, 2017.