Anastasios Arvanitopoulos
PhD Student
Arvanitopoulos E. Anastasios has received both BSc and MSc Diplomas in Electrical and Computer Engineering from the University of Patras, Greece in 2011. He has been a Ph.D. candidate at the Research Institute for Future Transport and Cities (FTC), Coventry University, UK since October 2016. His research is focused on Wide Bandgap (WBG) power semiconductor devices for high performance electronics in Electric Vehicles (EVs). Of his particular interest is the physical modelling of WBG semiconductor materials, like Silicon Carbide (both α- and β-SiC) and GaN. His research also includes the development of advanced Technology Computer Aided Design (TCAD) models towards analysing the role of the existing defects in the electrical performance of WBG Power Devices. The potential of 3C-SiC-on-Si as an alternative power semiconductor has also been investigated for power applications.

Lophitis, N.; Arvanitopoulos, A.; Perkins, S.; Antoniou, M.: ''TCAD device modelling and simulation of wide bandgap power semiconductors''; Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications, Kumar Sharma, Y (Editor), , pp., InTech – Open Access Publisher (10.5772/intechopen.76062), , , 2018.
Arvanitopoulos, A.; Antoniou, M.; Jennings, M.; Perkins, S.; Gyftakis, K. N.; Mawby, P.; Lophitis, N.: ''A Defects’-based model on the Barrier Height behaviour in 3C-SiC-on-Si Schottky Barrier Diodes''; IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. In Press, No. In Press, pp. In Press, October / November, 2019.
Arvanitopoulos, A.; Antoniou, M.; Perkins, S.; Jennings, M.; Belanche Guadas, M.; Gyftakis, K. N.; Lophitis, N.: ''On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes''; IEEE Transactions on Industry Applications, Vol. 55, No. 4, pp. 4080-4090, July / August, 2019.
Arvanitopoulos, A.; Lophitis, N.; Gyftakis, K. N.; Perkins, S.; Antoniou, M.: ''Validated Physical Models and Parameters of Bulk 3C–SiC Aiming for Credible Technology Computer Aided Design (TCAD) Simulation''; Semiconductor Science and Technology, Vol. 32, No. 10, pp. 1-13, October, 2017.
Arvanitopoulos, A.; Li, F.; Jennings, M.; Perkins, S.; Gyftakis, K. N.; Antoniou, M.; Mawby, P.; Lophitis, N.: ''Experimental investigation and verification of states affecting the performance of 3C-SiC-on-Si SBDs''; IEEE Energy Conversion Congress and Exposition, Baltimore MD, , US, pp. In Press, September / October, 2019.
Arvanitopoulos, A.; Antoniou, M.; Li, F.; Jennings, M.; Perkins, S.; Gyftakis, K. N.; Lophitis, N.: ''Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations''; IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics & Drives, Toulouse, France, pp. 364-370, August / September, 2019.
Perkins, S.; Antoniou, M.; Tiwari, A. K.; Arvanitopoulos, A.; Gyftakis, K. N.; Trajkovic, T.; Udrea, F.; Lophitis, N.: ''Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs''; IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics & Drives, Toulouse, France, pp. 358-363, August / September, 2019.
Arvanitopoulos, A.; Antoniou, M.; Jennings, M.; Li, F.; Perkins, S.; Gyftakis, K. N.; Lophitis, N.: ''On the Development of the 3C-SiC Power Law and its Applicability for the Evaluation of Termination Structures''; International Symposium on Power Semiconductors, Prague, Czech Republic, pp. , August, 2018.
Perkins, S.; Arvanitopoulos, A.; Gyftakis, K. N.; Lophitis, N.: ''On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures''; IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi’an, China, pp. 174-178, May, 2018.
Arvanitopoulos, A.; Perkins, S.; Gyftakis, K. N.; Jennings, M.; Antoniou, M.; Lophitis, N.: ''Carrier Transport Mechanisms Contributing to the Sub-Threshold Current in 3C-SiC-on-Si Schottky Barrier Diodes''; IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi’an, China, pp. 169-173, May, 2018.
Perkins, S.; Arvanitopoulos, A.; Gyftakis, K. N.; Lophitis, N.: ''A Comprehensive Comparison of the Static Performance of Commercial GaN-on-Si Devices''; IEEE Workshop on Wide Bandgap Power Devices and Applications, Albuquerque, New Mexico, pp. 177-184, December, 2017.
Arvanitopoulos, A.; Lophitis, N.; Gyftakis, K. N.; Belanche Guadas, M.; Perkins, S.; Antoniou, M.: ''Physical Parameterisation of 3C-Silicon Carbide (SiC) with Scope to Evaluate the Suitability of the Material for Power Diodes as an Alternative to 4H-SiC''; IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics & Drives, Tinos, Greece, pp. 565-571, August / September, 2017.
Arvanitopoulos, A.; Perkins, S.; Gyftakis, K. N.; Antoniou, M.; Lophitis, N.: ''3C-SiC Material Parameters for Accurate TCAD Modelling and Simulation''; International Conference on Silicon Epitaxy and Heterostructures, Coventry, UK, pp. 115-116, May, 2017.